Active solid-state devices (e.g. – transistors – solid-state diode – Conductivity modulation device
Reexamination Certificate
2005-03-15
2005-03-15
Nhu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Conductivity modulation device
C438S106000
Reexamination Certificate
active
06867442
ABSTRACT:
A semiconductor device has a first contact, by which charge carriers are injected into a semiconductor path, and a second contact, by which the charge carriers are extracted from the semiconductor path. The semiconductor path is formed by surface-modified semiconductor particles that bear alkyl or aryl ligands at their surface. The modification with ligands enables the semiconductor particles to form a stable dispersion that can easily be applied to a substrate with a printing technique. Consequently, the semiconductor device according to the invention can be produced very easily and inexpensively.
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Brent A. Ridley et al.: “All-Inorganic Field Effect Transistors Fabricated by Printing”,Science, vol. 286, Oct. 22, 1999, pp. 746-749.
M. G. Kane et al.: “Analog and Digital Circuits Using Organic Thin-Film Transistors on Polyester Substrates”,IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 534-536.
Halik Marcus
Klauk Hagen
Schmid Günter
Steffen Katja
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Nhu David
Stemer Werner H.
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