Surface-emitting-type semiconductor laser device

Details Surface-emitting-type semiconductor laser device Surface-emitting-type semiconductor laser device

1989-12-27

1991-05-28

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, 372 49, 357 17, H01S 319

Patent

active

050200666

ABSTRACT:
A surface-emitting-type semiconductor laser device having a buried structure wherein a burying part having a current blocking function is formed around a buried part comprising an active region. A reflecting mirror consisting of a semiconductor multilayer film is installed on the buried part and the burying part, and the Bragg wavelength of this semiconductor multilayer film is set in matching with a longitudinal mode one mode higher than the longitudinal mode of oscillation in pulse operation. This semiconductor multilayer film has a configuration wherein two kinds of GaAlAs layers having different composition ratios of Al are laminated alternately, and the layer thickness of each GaAlAS layer constituting the semiconductor multilayer film is set so as to able to realize the Bragg wavelength calculated theoretically.

REFERENCES:
patent: 4309670 (1982-01-01), Burnham et al.
patent: 4599729 (1986-07-01), Sasaki et al.
Sakaguchi et al., "Vertical Cavity Surface Emitting Laser with an AlGaAs/AlAs Bragg Reflector", Electronics Letters, Jul. 21, 1988, vol. 24, No. 15, pp. 928-929.
Iga et al., "Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser", IEEE Journal Quantum Electronics, vol. Q E-21, No. 6 Jun. 1985, pp. 663-668.

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