Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2004-09-07
2009-02-03
Jackson, Jr., Jerome (Department: 2815)
Coherent light generators
Particular active media
Semiconductor
C372S045010, C372S046010, C372S046013, C372S050110
Reexamination Certificate
active
07486713
ABSTRACT:
A surface-emitting type semiconductor laser includes a substrate; a first mirror disposed above the substrate; an active layer disposed above the first mirror; a second mirror disposed above the active layer; a first columnar section including the active layer, the first columnar section not having anisotropy; a first dielectric layer disposed in the first columnar section, the first dielectric layer including a symmetric opening section; a second columnar section disposed above the first columnar section, the second columnar section having an outer wall that has anisotropy; and a second dielectric layer disposed in the second columnar section, the second dielectric layer including an asymmetric opening section.
REFERENCES:
patent: 5331654 (1994-07-01), Jewell et al.
patent: 5568499 (1996-10-01), Lear
patent: 5594751 (1997-01-01), Scott
patent: 5778018 (1998-07-01), Yoshikawa et al.
patent: 5879961 (1999-03-01), Scott
patent: 5903588 (1999-05-01), Guenter et al.
patent: 6134251 (2000-10-01), Kawase et al.
patent: 6320893 (2001-11-01), Ueki
patent: 6603783 (2003-08-01), Kawase et al.
patent: 6639931 (2003-10-01), Dowd et al.
patent: 2002/0131462 (2002-09-01), Lin et al.
patent: A 6-224515 (1994-08-01), None
patent: A 8-116130 (1996-05-01), None
patent: A-8-181391 (1996-07-01), None
patent: A 10-27938 (1998-01-01), None
patent: A-10-505465 (1998-05-01), None
patent: A-10-242560 (1998-09-01), None
patent: A-11-054838 (1999-02-01), None
patent: A-11-121867 (1999-04-01), None
patent: A 11-307882 (1999-11-01), None
patent: A-11-354881 (1999-12-01), None
patent: A 2001-156394 (2001-06-01), None
patent: A 2001-156397 (2001-06-01), None
patent: A 2001-244563 (2001-09-01), None
patent: A-2001-525995 (2001-12-01), None
patent: A-2002-208755 (2002-07-01), None
patent: A-2002-299742 (2002-10-01), None
Choquette, et al., “Fabrication and Performance of Selectively Oxidized . . . ,” IEEE Photo. Tech.Lett., V-7 (1995), pp. 1237-1239.
Ide Tsugio
Kaneko Tsuyoshi
Nakayama Hitoshi
Jackson, Jr. Jerome
Oliff & Berridg,e PLC
Sayadian Hrayr A.
Seiko Epson Corporation
LandOfFree
Surface-emitting type semiconductor laser and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface-emitting type semiconductor laser and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface-emitting type semiconductor laser and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4102807