Surface-emitting type semiconductor laser and method for...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S050110, C372S050124

Reexamination Certificate

active

07440481

ABSTRACT:
A surface-emitting type semiconductor laser includes: an upper mirror and a lower mirror each composed of alternately formed first semiconductor layers and second semiconductor layers; an active layer disposed between the upper mirror and the lower mirror, wherein the surface-emitting laser emits laser light in a direction in which the first semiconductor layers and the second semiconductor layers are formed; a thick film layer formed with one of the first semiconductor layers composing the lower mirror, the thick film layer being thicker than other of the first semiconductor layers; and a third semiconductor layer provided between the thick film layer and one of the second semiconductor layers on the thick film layer, the third semiconductor layer having a refractive index between a refractive index of the first conductive layer and a refractive index of the second semiconductor layer.

REFERENCES:
patent: 5136345 (1992-08-01), Kasahara
patent: 5568499 (1996-10-01), Lear
patent: 6717972 (2004-04-01), Steinle et al.
patent: 2005/0123014 (2005-06-01), Shimizu et al.
patent: 2646799 (1997-05-01), None
patent: 2003-522421 (2003-07-01), None

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