Surface-emitting type semiconductor laser and its...

Details Surface-emitting type semiconductor laser and its... Surface-emitting type semiconductor laser and its...

2007-07-17

2007-07-17

Nguyen, Dung (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S034000, C372S043010

Reexamination Certificate

active

11035097

ABSTRACT:
To provide a surface-emitting type semiconductor laser that has good luminescence property and can be driven at high speeds, and its manufacturing method. In a surface-emitting type semiconductor laser having a first mirror, an active layer and a second mirror formed above a substrate, the surface-emitting type semiconductor laser in accordance with the present invention includes a columnar section including at least a portion of the second mirror, a first electrode formed above the first mirror or below the substrate, a second electrode formed above the second mirror, a dielectric layer formed around at least a portion of the columnar section and in contact with the columnar section, and a heat radiating section formed around at least a portion of the columnar section through the dielectric layer, wherein the heat radiating section is in an electrically floating state.

REFERENCES:
patent: 6775310 (2004-08-01), Sai et al.
patent: A-5-283796 (1993-10-01), None
patent: A-9-232668 (1997-05-01), None
patent: A-10-261830 (1998-09-01), None
patent: A-11-261153 (1999-09-01), None

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