Surface-emitting type semiconductor laser

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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Details

C372S050110, C372S050100, C372S044010, C372S019000

Reexamination Certificate

active

07620089

ABSTRACT:
A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; and an upper mirror formed above the active layer, wherein the upper mirror includes a first region in which a plurality of holes are formed and a second region inside the first region in which no hole is formed, the second region is in a circular shape as viewed in a plan view, the circular shape has a radius with which an energy increasing rate in the active layer becomes positive with a lower-order mode and (becomes) negative with a higher-order mode, and the holes have a depth with which the energy increasing rate becomes positive with the lower-order mode, and becomes negative with the higher-order mode.

REFERENCES:
patent: 5568499 (1996-10-01), Lear
patent: 5621750 (1997-04-01), Iwano et al.
patent: 6778581 (2004-08-01), Lipson
patent: 6810056 (2004-10-01), Lipson et al.
patent: 2002/0163947 (2002-11-01), Ostergaard et al.
patent: 2004/0091010 (2004-05-01), Choquette et al.
patent: 2005/0089075 (2005-04-01), Baba et al.
patent: 2006/0093008 (2006-05-01), Mochizuki
patent: 1 528 647 (2005-05-01), None
patent: A 2003-086895 (2003-03-01), None
patent: WO 02/073753 (2002-09-01), None
Painter et al., “Lithographic Tuning of a Two-Dimensional Photonic Crystal Layer Array”, IEEE Photonics Technology Letters, vol. 12, No. 9, September 2000, pp. 1126-1128.

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