Surface-emitting type semiconductor laser

Details Surface-emitting type semiconductor laser Surface-emitting type semiconductor laser

2007-06-12

2008-09-09

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S050110, C372S050124

Reexamination Certificate

active

07424043

ABSTRACT:
A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; and an upper mirror formed above the active layer, wherein each of the lower mirror and the upper mirror is composed of a multilayer mirror in which a plurality of unit multilayer films are laminated, each of the unit multilayer films includes a pair of a lower refractive index layer and a higher refractive index layer laminated in a thickness direction, each of the unit multilayer films satisfies a formula (1) below, and the active layer satisfies a formula (2) below,in-line-formulae description="In-line Formulae" end="lead"?dD<λ/2nD  (1)in-line-formulae description="In-line Formulae" end="tail"?in-line-formulae description="In-line Formulae" end="lead"?dA>mλ/2nA  (2)in-line-formulae description="In-line Formulae" end="tail"?where λ is a design wavelength of the surface-emitting type semiconductor laser, m is a positive integer, dDis a thickness of the unit multilayer film, nDis a mean refractive index of the unit multilayer film, dAis a thickness of the active layer, and nAis a mean refractive index of the active layer.

REFERENCES:
patent: 2005/0123014 (2005-06-01), Shimizu et al.
patent: 2006/0227836 (2006-10-01), Omori et al.
patent: 2006/0285568 (2006-12-01), Watanabe et al.
patent: 1 387 452 (2004-02-01), None
patent: 2003-086895 (2003-03-01), None
patent: A-2003-86895 (2003-03-01), None
patent: WO 02/071562 (2002-09-01), None
patent: WO 2004/015454 (2004-02-01), None

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