Surface-emitting type semiconductor laser

Details Surface-emitting type semiconductor laser Surface-emitting type semiconductor laser

2008-07-08

2008-07-08

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S034000, C372S036000

Reexamination Certificate

active

11566402

ABSTRACT:
A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; and a current constricting section formed above or below the active layer, wherein the second mirror has a plurality of concave sections arranged within a plane perpendicular to a light emission direction, and a light confining region surrounded by the concave sections is formed inside a region surrounded by the current constricting section as viewed in a plan view.

REFERENCES:
patent: 7085301 (2006-08-01), Choquette et al.
patent: 2004/0091010 (2004-05-01), Choquette et al.
patent: 2006/0093008 (2006-05-01), Mochizuki
patent: 2007/0147459 (2007-06-01), Ueki
patent: 0 653 823 (1995-05-01), None
patent: 1 528 647 (2002-05-01), None
patent: A 2003-086895 (2003-03-01), None
patent: WO 02/073753 (2002-09-01), None
Wipiejewski T. et al.: “Improved performance of vertical-cavity surface-emitting laser diodes with Au-plated heat spreading layer” Electronics Letters, Iee Stevenage, GB, vol. 31, No. 4, Feb. 16, 1995, pp. 279-281, XP006002449.

Affiliated with

Also associated with

Rating

Surface-emitting type semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Surface-emitting type semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface-emitting type semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3940900