Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2011-01-25
2011-01-25
Van Roy, Tod T (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S050230, C372S099000, C372S101000
Reexamination Certificate
active
07876801
ABSTRACT:
A surface-emitting type semiconductor laser includes: a lower mirror; an active layer formed above the lower mirror; an upper mirror formed above the active layer; and a lens section formed above the upper mirror, wherein n1>n, where λ is a design wavelength, n1is a refractive index of a topmost layer of the upper mirror with respect to light of the design wavelength, and n is a refractive index of the lens section with respect to light of the design wavelength, the lens section has a thickness of λ/2n at an anti-node of the zeroth order resonance mode component among light resonating in the active layer, and the lens section has a thickness of λ/4n at at least a portion of an anti-node of the first order resonance mode component among the light resonating in the active layer.
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Fordé Delma R
Harness & Dickey & Pierce P.L.C.
Roy Tod T Van
Seiko Epson Corporation
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