Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Passivating of surface
Reexamination Certificate
2006-07-18
2008-12-09
Wojciechowicz, Edward (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Passivating of surface
C438S039000, C438S412000, C438S465000, C438S696000, C438S699000
Reexamination Certificate
active
07462504
ABSTRACT:
A surface-emitting type light-emitting diode includes a substrate, a p-n junction layer elevated on a portion of the substrate to emit light, and a first isolator layer formed on a sidewall of the p-n junction layer as well as a periphery portion of a top surface of the p-n junction layer except for a central region of the top surface.
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Lee Kie Young
Leem Shi Jong
Birch & Stewart Kolasch & Birch, LLP
LG Electronics Inc.
Wojciechowicz Edward
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