Surface-emitting type light-emitting diode and fabrication...

Details Surface-emitting type light-emitting diode and fabrication... Surface-emitting type light-emitting diode and fabrication...

2006-09-26

2006-09-26

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S080000, C257S081000, C257S103000

Reexamination Certificate

active

07112821

ABSTRACT:
Disclosed is a surface-emitting type light-emitting diode including a substrate, a p-n junction layer elevated on a portion of the substrate to emit light, and a first isolator layer formed on a sidewall of the p-n junction layer as well as a periphery portion of a top surface of the p-n junction layer except for a central region of the top surface.

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patent: 6654399 (2003-11-01), Kimura et al.
patent: 6711191 (2004-03-01), Kozaki et al.
patent: 2003/0006230 (2003-01-01), Kaji
patent: 2003/0183827 (2003-10-01), Kawaguchi et al.
patent: 07-079015 (1995-03-01), None
patent: 09-074219 (1997-03-01), None

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