Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Patent
1997-03-10
1999-07-20
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
257 86, 257 98, 257103, H01L 2715
Patent
active
059258969
ABSTRACT:
A surface-emitting semiconductor optical device is provided, which has a high external quantum efficiency and a high coupling efficiency with an optical fiber. This device has a multilayer device structure including an optical absorption layer formed by a semiconductor substrate, a semiconductor mirror layer, a first (n- or p-type) semiconductor cladding layer, a semiconductor active layer, a second (p- or n-type) semiconductor cladding layer, and a current spreading layer formed by a transparent and doped semiconductor wafer. These layers are stacked along a stacking direction of the device structure. The absorption layer is located at a first end of the body. The active layer is sandwiched between the first and second cladding layers. The mirror layer is located between the first cladding layer and the absorption layer, and serves to reflect the light generated by the active layer toward the current spreading layer. The current spreading layer is located at a second end of the body opposite to the first end. First and second electrodes are formed at the first and second ends of the body, respectively. An exposed surface of the current spreading layer serves as a light-emitting surface.
REFERENCES:
patent: 5319219 (1994-06-01), Cheng et al.
patent: 5466950 (1995-11-01), Sugawara et al.
Hideto Sugawara et al, "High-Efficiency InGaAIP Visible Light-Emitting Diodes", Jpn. J. Appl. Phys. vol. 31 (1992) pp. 2446-2451, Part 1, No. 8, Aug. 1992.
F. A. Kish et al, "Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P/GaP light-emitting diodes", Appl. Phys. Lett. vol. 64, No. 21, May 23 1994, pp. 2839-2841.
Guay John
Kelley Nat K.
NEC Corporation
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