Surface-emitting semiconductor light emitting device

Details Surface-emitting semiconductor light emitting device Surface-emitting semiconductor light emitting device

1998-02-26

1999-06-01

Bovernick, Rodney

Coherent light generators

Particular resonant cavity

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372 46, 372 45, 257 94, 257 98, 257 99, H01S 319

Patent

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059094591

ABSTRACT:
A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer,p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

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patent: 5414281 (1995-05-01), Watabe et al.
patent: 5471067 (1995-11-01), Ikeda et al.
patent: 5640409 (1997-06-01), Ito et al.
Japanese Abstract, vol. 13, No. 53, JP63245969, Oct. 13, 1988.

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