Surface-emitting semiconductor light emitting device

Details Surface-emitting semiconductor light emitting device Surface-emitting semiconductor light emitting device

1995-07-11

1997-04-01

Bovernick, Rodney B.

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372 45, 257 94, 257 98, 257 99, H01S 319

Patent

active

056174462

ABSTRACT:
A surface-emitting semiconductor light emitting device comprises an n-type ZnSe buffer layer, n-type ZnSSe layer, n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, p-type ZnSSe layer, p-type ZnSe contact layer, p-type ZnSe/ZnTe MQW layer and p-type ZnTe contact layer, sequentially stacked on an n-type GaAs substrate. A grid-shaped p-side electrode and a Au film convering the p-side electrode are provided on the p-type ZnTe contact layer. An n-side electrode is provided on the back surface of the n-type GaAs substrate. The active layer has a single quantum well structure or a multiple quantum structure including ZnCdSe quantum well layers.

REFERENCES:
patent: 4797890 (1989-01-01), Inaba et al.
patent: 5351255 (1994-09-01), Schetzina
patent: 5373175 (1994-12-01), Ozawa et al.
patent: 5414281 (1995-05-01), Watabe et al.
patent: 5471067 (1995-11-01), Ikeda et al.

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