Surface emitting-semiconductor laser component featuring...

Coherent light generators – Particular active media – Semiconductor

Reexamination Certificate

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C372S021000, C372S022000, C372S027000

Reexamination Certificate

active

07620088

ABSTRACT:
A surface-emitting semiconductor laser component, in particular an electrically pumped semiconductor laser component, featuring emission in a vertical direction. The component is provided for the generation of laser radiation by means of an external optical resonator (4, 5). The component comprises a semiconductor body with a semiconductor layer sequence (2) having a lateral main direction of extension and an active zone (3) provided for generation of radiation. A radiation-transmissive contact layer (6) is arranged within the resonator and is electrically conductively connected to the semiconductor body.

REFERENCES:
patent: 5317587 (1994-05-01), Ackley et al.
patent: 5459746 (1995-10-01), Itaya et al.
patent: 5724376 (1998-03-01), Kish et al.
patent: 6243407 (2001-06-01), Mooradian
patent: 6393038 (2002-05-01), Raymond et al.
patent: 6744805 (2004-06-01), Wang et al.
patent: 6778582 (2004-08-01), Mooradian
patent: 2003/0031221 (2003-02-01), Wang et al.
patent: 2003/0123495 (2003-07-01), Cox
patent: 2003/0141604 (2003-07-01), Eisert et al.
patent: 102 03 809 (2003-08-01), None
patent: WO 98/43329 (1998-10-01), None
patent: WO 01/67563 (2001-09-01), None
patent: WO 02/27877 (2002-04-01), None
M. A. Matin et al., “Optically transparent indium-tin-oxide (ITO) ohmic contacts in the fabrication of vertical cavity surface-emitting lasers”, Electronics Letters, vol. 30, No. 4, pp. 318-320, Feb. 17, 1994.
C.L. Chua et al., “Indium Tin Oxide Transparent Electrodes for Broad-Area Top-Emitting Vertical-Cavity Lasers Fabricated Using a Single Lithography Step”, IEEE Photonics Technology Letters, vol. 9, No. 5, pp. 551-553, May 5, 1997.
El Kurdi et al., “Room temperature continuous-wave laser operation of electrically-pumped 1.55 microns VECSEL”, Electronics Letters, IEEE, vol. 40, No. 11, May 27, 2004 pp. 671-672.
Chua et al., “Buried oxide vertical-cavity surface-emitting laser arrays with transparent top electrodes”, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics, Conference Edition, 1998 Technical Digest Series, vol. 6 (IEEE Cat. No. 98 CH36178) Opt. Soc. America Washington, DC, USA, 1998, pp. 370-371.

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