Surface emitting semiconductor laser and process for...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C438S039000, C438S719000

Reexamination Certificate

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07098059

ABSTRACT:
A surface emitting semiconductor laser includes a substrate, a first semiconductor multilayer reflector formed on the substrate, an active region formed on the first semiconductor multilayer reflector, a second semiconductor multilayer reflector formed on the active region, a current confinement layer interposed between the first and second semiconductor multilayer reflectors and partially including an oxide region, and an insulating layer formed on a coated surface provided by a semiconductor layer which is part of the first semiconductor multilayer reflector and is revealed after removal of a surface oxidation layer.

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patent: 6636542 (2003-10-01), Ueki
Ueki et al., “Single-Transverse-Mode 3.4-mW Emission of Oxide-Confined 780-nm VCSEL's”, IEEE Photonics Technology Letters, vol. 11, No. 12, pp. 1539-1541, Dec. 1999.

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