Surface emitting semiconductor laser and method of manufacture

Details Surface emitting semiconductor laser and method of manufacture Surface emitting semiconductor laser and method of manufacture

1994-03-03

1994-12-20

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 96, 437129, H01S 319, H01L 2100

Patent

active

053751337

ABSTRACT:
A surface emitting semiconductor laser is provided with at least reflection mirrors on the substrate side composed of a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. The first and second layers are alternately stacked. The semiconductor laser is also composed of a distributive reflection multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. As a result, the multiple layer band structure of the distributive reflection mirror has been improved, current easily flows vertically through the multiple layers and the element resistance is low. In addition, a simple and reliable method is employed to fabricate the distributive reflection mirror because the doping concentration is controlled through dopant gas flow control or is controlled through light exposure.

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Journal of Crystal Growth, vol. 107, No. 1/4, Jan. 1, 1991, pp. 790-794; "In0.47Ga0.53As-InP heterostructures for Vertical Cavity Surface Emitting Lasers at 1.65 .mu.m Wavelength" by R. D. Dupuis, et al.; p. 791, left column, line 6-right column, line 8.
Yoshifumi Tsunekawa et al., "High Power Operation of AlGaAs/GaAs Large Optical Cavity Lase Diode with ZnS.sub.x Se.sub.1-x (x=0.06) Layer Grown by Adduct-Source Metalorganic Chemical Vapor Deposition Method", Japanese Journal of Applied Physics, vol. 28(11), pp. L2085-L2088, Nov., 1989.
K. Tai et al., "Drastic Reduction of Series Resistance in Doped Semiconductor Distributed Bragg Reflectors for Surface-Emitting Lasers", Applied Physics Letters, vol. 56(25), pp. 2496-2498, Jun. 18, 1990.
K. Mori et al., "Effect of Cavity Size on Lasting Characteristics of a Distributed Bragg Reflector-Surface Emitting Laser With Buried Heterostructure", Applied Physics Letters, vol. 60(1), pp. 21-22, Jan. 6, 1992.

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