Surface emitting semiconductor laser and method of...

Details Surface emitting semiconductor laser and method of... Surface emitting semiconductor laser and method of...

2006-03-28

2006-03-28

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S046010

Reexamination Certificate

active

07020173

ABSTRACT:
A surface emitting semiconductor laser includes a substrate, a first mirror that is formed on the substrate and includes semiconductor layers of a first conduction type, a second mirror that includes semiconductor layers of a second conduction type, an active region disposed between the first and second mirrors, a current confinement layer that is disposed between the first and second mirrors and includes a selectively oxidized region, and an inorganic insulation film. A mesa structure includes at least the second mirror and the current confinement layer. The inorganic insulation film covers at least a side surface of the mesa structure and having an internal stress equal to or less than 1.5×109dyne/cm2.

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