Surface emitting semiconductor laser, and method and...

Details Surface emitting semiconductor laser, and method and... Surface emitting semiconductor laser, and method and...

2006-07-18

2006-07-18

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S039000, C438S042000

Reexamination Certificate

active

07078257

ABSTRACT:
A method of fabricating a surface emitting semiconductor laser includes a first step of forming, on a substrate, multiple monitor-use semiconductor layers having stripes radiating from a center of the substrate, and a laser portion that includes semiconductor layers and is located on the periphery of the multiple monitor-use semiconductor layers, a second step of monitoring oxidized conditions on the multiple monitor-use semiconductor layers when a selectively oxidized region is formed in the laser portion, and a third step of controlling oxidization of the selectively oxidized region on the basis of the oxidized conditions thus monitored.

REFERENCES:
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patent: 6529541 (2003-03-01), Ueki et al.
patent: 6593628 (2003-07-01), Dekker et al.
patent: 6650045 (2003-11-01), Forrest et al.
patent: 6650683 (2003-11-01), Ueki et al.
patent: 2001/0045619 (2001-11-01), Dekker et al.
patent: A 2001-93897 (2001-04-01), None

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