Surface-emitting semiconductor laser and manufacturing method of

Details Surface-emitting semiconductor laser and manufacturing method of Surface-emitting semiconductor laser and manufacturing method of

1989-04-12

1990-08-14

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 17, 372 46, H01S 319, H01L 2712, H01L 3300

Patent

active

049493515

ABSTRACT:
A surface-emitting semiconductor laser having a lower reflection mirror including a semiconductor multilayer disposed on an n-type substrate so as to form an upper reflection mirror with TiPtAu such that a double heterojunction between the lower and upper reflection mirrors is configured in a columnar shape and that an insulating material is buried in a periphery of the double heterojunction. The non-alloyed metal of TiPtAu serves three functions of an ohmic metal, a reflective layer, and an etching mask.

REFERENCES:
Iga et al., "Microcavity GaAlAs/GaAs Surface Emitting Laser D.H. I.sub.th =6mA", Electronics Letters, Jan. 29, 1987, vol. 23, No. 3, pp. 134-136.

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