Surface emitting semiconductor laser and manufacturing...

Coherent light generators – Particular resonant cavity – Specified cavity component

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C372S043010, C372S096000, C372S098000

Reexamination Certificate

active

07126977

ABSTRACT:
The invention provides surface emitting semiconductor laser where a transverse mode is controllable stably, a method of manufacturing it and a light module and a light transmission device including the surface emitting semiconductor laser are provided. A surface-emitting laser of the present invention can include a resonator formed on a substrate and can emit a laser from a emitting surface installed on the upper surface of a resonator toward the direction vertical to the substrate. This surface emitting semiconductor laser further includes first and second electrodes for injecting an electric current into the resonator. At least a part of the first electrode is formed on the upper surface of the resonator and includes an aperture in the resonator. The emitting surface is installed within the aperture. The reflectivity adjustment layer is formed on the emitting surface.

REFERENCES:
patent: 5256596 (1993-10-01), Ackley et al.
patent: 5428634 (1995-06-01), Bryan et al.
patent: 5831960 (1998-11-01), Jiang et al.
patent: 5838715 (1998-11-01), Corzine et al.
patent: 5917848 (1999-06-01), Claisse et al.
patent: 6026111 (2000-02-01), Jiang et al.
patent: 6144682 (2000-11-01), Sun
patent: 6160834 (2000-12-01), Scott
patent: 6185241 (2001-02-01), Sun
patent: 6590917 (2003-07-01), Nakayama et al.
patent: 6618414 (2003-09-01), Wasserbauer et al.
patent: 6653157 (2003-11-01), Kondo
patent: 6751245 (2004-06-01), Wasserbauer et al.
patent: 6865214 (2005-03-01), Kim
patent: 6905900 (2005-06-01), Johnson et al.
patent: 6936839 (2005-08-01), Taylor
patent: 2002/0127754 (2002-09-01), Kaneko et al.
patent: 2002/0191659 (2002-12-01), Skogman
patent: 1 130 720 (2001-09-01), None
patent: A 63-274187 (1988-11-01), None
patent: A 2000-22271 (2000-01-01), None
patent: A 2000-67449 (2000-03-01), None
patent: A 2001-156395 (2001-06-01), None
patent: A 2001-284722 (2001-10-01), None
patent: A 2001-284727 (2001-10-01), None
patent: WO 02/45217 (2002-06-01), None
R. A. Morgan et al.; “Hybrid Dielectric/AlGaAs Mirror Spatially Filtered Verical Cavity Top-Surface Emitting Laser”; Applied Physics Letters; vol. 66, No. 15; Mar. 1995; pp. 1157-1159.
R. R. Schaefer; “Method for Fabricating Polymide Films”; XP-000806741; IBM Technical Disclosure Bulletion; vol. 25, No. 3A; Aug. 1982; pp. 1162-1163.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Surface emitting semiconductor laser and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Surface emitting semiconductor laser and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface emitting semiconductor laser and manufacturing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3704212

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.