Surface emitting semiconductor laser and communication...

Details Surface emitting semiconductor laser and communication... Surface emitting semiconductor laser and communication...

2006-12-26

2006-12-26

Phan, Tho (Department: 2821)

Coherent light generators

Particular active media

Semiconductor

C372S096000, C372S045013, C257S096000

Reexamination Certificate

active

07154927

ABSTRACT:
A surface emitting semiconductor laser includes: a semiconductor substrate; a first semiconductor multilayer reflection film of a first conduction type on the semiconductor substrate; a second semiconductor multilayer reflection film of a second conduction type; an active region and a current confining layer interposed between the first and second semiconductor multilayer reflection films; and a low-resistance layer interposed between the current confining layer and the active region.

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patent: A 2002-185079 (2002-06-01), None
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Nobuaki Ueki et al.; “Single-Transverse-Mode 3.4-mW Emission of Oxide-confined 780-nm Vesel's”; IEEE Photonics Technology Letters; vol. 11, No. 12; Dec. 1999; pp. 1539-1541.
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M. Grabherr et al.; “Efficient Single-Mode Oxide-Confined GaAs VCSEL's Emitting in the 850-nm Wavelength Regime”; IEEE Photonics Technology Letters; vol. 9, No. 10, ; Oct. 1997; pp. 1304-1306.
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