Surface emitting semiconductor laser

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 50, 372 46, H01S 319

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060523980

ABSTRACT:
Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.

REFERENCES:
patent: 5212706 (1993-05-01), Jain
A. R. Sugg et al, N-P-(P+-N+)-N ALYGA1-YAS-GAAS-INXGA1-XAS Quantum-Well Laser With P+-N+ GAAS-INGAAS Tunnel Contact On N-GASS, Applied Physics Letters, vol. 62, No. 20, May 17, 1993, pp. 2510-2512.
D. I. Babic et al. "Room-Temperature Continuous-Wave Operation Of 1.54-MU M Vertical-Cavity Lasers", IEEE Photonics Technology Letters, vol. 7, No. 11, Nov. 1, 1995, pp. 1225-1227.
Patent Abstracts of Japan, vol. 018, No. 080 (E-1505), Feb. 9, 1994 Corresponding to JP 05 291698 A (NEC Corporation) Nov. 5, 1993.

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