Coherent light generators – Particular active media – Semiconductor
Patent
1998-04-02
2000-04-18
Sanghavi, Hemang
Coherent light generators
Particular active media
Semiconductor
372 45, 372 50, 372 46, H01S 319
Patent
active
060523980
ABSTRACT:
Two semiconductor layers of the laser form a tunnel junction enabling an electrical current for pumping the laser to pass from an N doped semiconductor Bragg mirror to a P doped injection layer belonging to the light-amplifying structure. The Bragg mirror co-operates with another mirror of the same type having the same doping to include said structure in an optical cavity of the laser. In a variant, the tunnel junction may be buried and located so as to constitute confinement means for said pumping current. The laser can be used in an optical fiber communications network.
REFERENCES:
patent: 5212706 (1993-05-01), Jain
A. R. Sugg et al, N-P-(P+-N+)-N ALYGA1-YAS-GAAS-INXGA1-XAS Quantum-Well Laser With P+-N+ GAAS-INGAAS Tunnel Contact On N-GASS, Applied Physics Letters, vol. 62, No. 20, May 17, 1993, pp. 2510-2512.
D. I. Babic et al. "Room-Temperature Continuous-Wave Operation Of 1.54-MU M Vertical-Cavity Lasers", IEEE Photonics Technology Letters, vol. 7, No. 11, Nov. 1, 1995, pp. 1225-1227.
Patent Abstracts of Japan, vol. 018, No. 080 (E-1505), Feb. 9, 1994 Corresponding to JP 05 291698 A (NEC Corporation) Nov. 5, 1993.
Boucart Julien
Brillouet Francois
Garabedian Patrick
Goldstein Leon
Jacquet Joel
Alcatel
Cushwa Benjamin
Sanghavi Hemang
LandOfFree
Surface emitting semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface emitting semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface emitting semiconductor laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2342373