Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-10-30
2010-06-15
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S050110
Reexamination Certificate
active
07738526
ABSTRACT:
In a surface emitting semiconductor laser, the primary surface of a substrate includes first to third areas. The first and second areas are contiguous to each other, and the third area surrounds the first and second areas. A first DBR is provided on the substrate. An active layer is provided on the following: the first DBR; the first and second areas; and a boundary therebetween. A first semiconductor spacer layer is provided on the active layer. A second semiconductor spacer layer is provided on the first semiconductor spacer layer. The conductivity type of the first semiconductor spacer layer is different from that of the second semiconductor spacer layer. A tunnel junction region is on the first area and between the first and the second semiconductor spacer layers. The active layer, the first semiconductor spacer layer, the second semiconductor spacer layer, the tunnel junction region constitutes an optical cavity mesa, which includes low-resistance and high-resistance regions located on the first area and the second area, respectively. The low-resistance region includes the tunnel junction region. A second DBR is on the second semiconductor spacer layer and the first area. A first electrode is on the first and second areas and the boundary.
REFERENCES:
IEEE Journal of Selected Topics in Quantum Electronics, “Long-Wavelength Vertical-Cavity Surface-Emitting Lasers . . . by MOCVD”, vol. 11, No. 5, Sep./Oct. 2005; N. Nishiyama et al.; pp. 990-998.
IEEE Photonics Technology Letters; “High Power Conversion Efficiencies and Scaling . . . Lasers”, vol. 6, No. 7, Jul. 1994; K.L. Lear et al.; pp. 778-781.
Rodriguez Armando
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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