Surface-emitting semiconductor elements

Details Surface-emitting semiconductor elements Surface-emitting semiconductor elements

1984-02-21

1987-01-13

Sikes, William L.

Coherent light generators

Particular component circuitry

Optical pumping

372 50, H01L 3300

Patent

active

046368213

ABSTRACT:
A surface-emitting semiconductor light emitting element, such as a laser or a light emitting diode, having at least one active light emitting layer on a semi-insulating substrate, with p-type and n-type semiconductor regions also on the substrate and in contact with opposite side faces of the active layer. The active layer has a narrower band gap than the semiconductor regions. The light emitting region may comprise a multilayer structure of plural active light emitting layers sandwiched between alternating p-type and n-type semiconductor layers.

REFERENCES:
patent: 4527179 (1985-07-01), Yamazaki
"Surface-Emitting GaInAsP/InP Injection Laser with Short Cavity Length"; Electronics Letters; vol. 18, No. 11; 5/27/82; pp. 461-463.

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