Surface emitting photonic switching structure

Details Surface emitting photonic switching structure Surface emitting photonic switching structure

1994-06-06

1995-06-13

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 85, 257 98, 257184, 372 46, 372 50, 359248, H01L 2714

Patent

active

054245591

ABSTRACT:
A surface emitting photonic switching structure includes an intermediate semiconductor structure having pn junction is sandwiched between a first semiconductor multi-layer film mirror (DBR1) and a second semiconductor multi-layer film mirror (DBR2). A pair of electrodes are provided to the intermediate semiconductor structure and the pn junction therein is applied with reverse bias voltages for changing the effective optical length of the intermediate semiconductor structure so as to change transmission wavelength of light incident on the second multi-layer film mirror or the first multi-layer film mirror. The structure can be two-dimensionally integrated, be compact and is capable of operating with low voltages.

REFERENCES:
patent: 4845535 (1989-07-01), Yamanishi et al.
patent: 4991179 (1991-02-01), Deppe et al.
patent: 5084894 (1992-01-01), Yamamoto
patent: 5157681 (1992-10-01), Aoyagi et al.
patent: 5283447 (1994-02-01), Olbright et al.
"Continuous Wavelength Tuning of Two-Electrode Vertical Cavity Surface Emitting Lasers" Electronics Letters, 23 May 1991, vol. 27, No. 11, pp. 1002-1003.
"Photonic Switching" 1991 Technical Digest Series, Mar. 6-8, 1991, Salt Lake City, Utah, pp. 246-249.

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