Surface emitting photonic device

Details Surface emitting photonic device Surface emitting photonic device

2010-03-17

2011-11-22

Nguyen, Dung (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S050110, C372S064000

Reexamination Certificate

active

08064493

ABSTRACT:
A surface emitting photonic device including a substrate; and a waveguide structure on the substrate. The waveguide structure includes an active region along its longitudinal axis and the active region is for generating light. The waveguide structure also has a trench formed therein transverse to the active region and defining a first wall forming an angled facet at one end of the active region, the first wall having a normal that is at a non-parallel angle relative to the longitudinal axis of the waveguide structure. The trench also defines a second wall located opposite the first wall.

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Chao, et al., “Low-Threshold, High-Power, 1.3-um Wavelength, InGaAsP-InP Etched-Facet Folded-Cavity Surface-Emitting Lasers,” IEEE Photonics Technology Letters, vol. 7, No. 8, Aug. 1995, 3 pages.
International Search Report and Written Opinion of the International Searching Authority, the United States Patent and Trademark Office, for PCT/US2010/038359, dated Aug. 20, 2010, 8 pages.

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