Surface emitting lasers with low resistance bragg reflectors

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 96, 372 99, H01S 319

Patent

active

052127036

ABSTRACT:
A vertical cavity surface emitting laser is disclosed including a lower cladding layer of a particular conductivity type deposited on the semiconductor substrate, having multiple periods of semiconductor layers of varying index cf refraction so deposited as to form a .lambda./2 Bragg reflector; and an upper cladding layer of opposite conductivity type having multiple periods of semiconductor layers of varying index of refraction so deposited as to form a multilayer reflector.

REFERENCES:
patent: 5115441 (1992-05-01), Kopf et al.
Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, and L. T. Florez, "Room-temperature Continuous-wave Vertical-cavity Single-quantum-well Microlaser Diodes", Electron. Lett., vol. 25, pp. 1377-1378, 1989.
R. S. Geels, S. W. Corzine, J. W. Scott, D. B. Young, and L. A. Coldren, "Low Threshold Planarized Vertical-cavity Surface Emitting Lasers", IEEE Photonics Technol. Letters, vol. 2, pp. 234-236, 1990.

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