Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-08-29
2006-08-29
Menefee, James (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S046013
Reexamination Certificate
active
07099363
ABSTRACT:
A surface-emitting laser has a lower multilayer film reflecting mirror, an active layer, a current confinement layer, a clad layer, an upper multilayer film reflecting mirror, and an upper electrode formed in the order described on the upper surface of a substrate having a lower electrode formed on the lower surface thereof. The current confinement layer includes a conductive part and an insulating part surrounding the conductive part with the conductive part being defined by a sidewall surface that widens along a direction toward the active layer.
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Hersee et al. “Low-threshold GRIN-SCH GaAs/GaAIAs laser structure grown by OM VPE,” Electronics Letters, vol. 18, No. 14, Jul. 1982, p. 618-620.
Fujitsu Limited
Menefee James
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