Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2008-03-18
2008-03-18
Harvey, Minsun Oh (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045012, C372S046010, C372S046013
Reexamination Certificate
active
11259096
ABSTRACT:
A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
REFERENCES:
patent: 5835521 (1998-11-01), Ramdani et al.
patent: 6515308 (2003-02-01), Kneissl et al.
patent: 6653158 (2003-11-01), Hall et al.
patent: 6687281 (2004-02-01), Coldren et al.
patent: 6810065 (2004-10-01), Naone
patent: 6931042 (2005-08-01), Choquette et al.
patent: 7009215 (2006-03-01), D'Evelyn et al.
patent: 7123638 (2006-10-01), Leary et al.
patent: 2002/0075926 (2002-06-01), Coldren et al.
patent: 2002/0127758 (2002-09-01), Dagenais et al.
patent: 2004/0218655 (2004-11-01), Tandon et al.
patent: 2005/0083979 (2005-04-01), Leary et al.
patent: 2005/0105576 (2005-05-01), Kim
patent: 2006/0002444 (2006-01-01), Wang et al.
patent: 2006/0062266 (2006-03-01), Jewell
patent: A 10-303515 (1998-11-01), None
patent: A 10-321952 (1998-12-01), None
patent: A 2002-134835 (2002-05-01), None
Reddy et al., “Selectively Etched Tunnel Junction for Lateral Current and Optical Confinement in INP-Based Vertical Cavity Lasers,” Journal of Electronic Materials, vol. 33, pp. 118-122 {2004}.
Hall et al., “Increased Lateral Oxidation Rates of AllnAs on InP Using Short-Period Superlattices,” Journal of Electronics Materials, vol. 33, pp. 118-122, {2004}.
Otoma Hiromi
Sakurai Jun
Ueki Nobuaki
Yamamoto Masateru
Fuji 'Xerox Co., Ltd.
Harvey Minsun Oh
Nguyen Phillip
Oliff & Berridge PLC.
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