Surface-emitting laser diode

Details Surface-emitting laser diode Surface-emitting laser diode

1988-07-14

1991-11-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, 372 92, H01S 319

Patent

active

050688693

ABSTRACT:
A surface-emitting semiconductor laser diode has a vertical multilayer active region and a lateral buried heterojunction. Effective carrier confinement to the active region is achieved, thereby permitting laser action at room temperature under continuous-wave operation with a low threshold current of about 2 mA.

REFERENCES:
patent: 4309670 (1982-01-01), Burnham et al.
patent: 4873696 (1989-10-01), Coldren et al.
patent: 4901327 (1990-02-01), Bradley
Kenichi Iga et al., "Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser", IEEE JQE, vol. QE-21, No. 6, Jun. 1985, pp. 663-668.

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