Surface-emitting laser device

Details Surface-emitting laser device Surface-emitting laser device

1996-11-01

1999-03-16

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 96, H01S 319

Patent

active

058839119

ABSTRACT:
An improved surface-emitting laser device by which the light emitting wave length can be easily varied since the electric potential grown using the thin film material having a desired lattice rate uses a very small portion of activation layers, and by which the continuous oscillation is made at room temperature by using the reflector having high reflective index. Thus, optical characteristics are increased, which includes a GaAs substrate; a lower reflector is formed of multiple layers of AlAs/GaAs heterogenous thin films having a reflective index of 1 on the GaAs substrate; a tooth-shaped grading layer is formed of a lower reflector on the lower reflector and an In.sub.x Ga.sub.1-x As thin film having a large lattice rate in a compositional grading method; a tooth-shaped InGaAs grading well is formed on the In.sub.x Ga.sub.1-x As grading layer as an In composition of which reduced rather than the grading layer; a buffer layer is formed on the In.sub.x Ga.sub.1-x As thin film and formed of a lattice-bonded InP; and an upper semiconductor reflector is formed on a multilayer of an InAlAs/InAlGaAs heterogenous thin film on the buffer layer, which has a reflective index of 1, in which a laser beam is emitted from the surface of the same.

REFERENCES:
patent: 5289494 (1994-02-01), Tada et al.
Double-fused 1.52-.mu.m vertical-cavity lasers; Dubravko I. Babic, James J. Dudley, Klaus Streubel, Richard P. Mirin, John E. Bowers, and Evelyn L. Hu; Received 19 Oct. 1994; accepted for publication 28 Dec. 1994; pp. 1030-1032.
Fabry-Perot reflectance modulator for 1.3.mu.m from (InAlGa)As materials grown at low temperature; I.J. Fritz, B.E. Hammons, A.J. Howard, T.M. Brennen and J.A. Olsen; Received 10 Aug. 1992; accepted for publication 7 Dec. 1992; pp. 919-921.
High-Reflectivity In.sub.0.29 Ga.sub.0.72 As/In.sub.0.28 Al.sub.0.72 As Ternary Mirrors for 1.3 .mu.m Vertical-Cavity Surface-Emitting Lasers Grown on GaAs; Koji Otsubo, Hajime Shoji, Takuya Fujii, Manabu Matsuda and Hiroshi Ishikawa; Received Nov. 25, 1994; accepted for publication Jan. 10, 1995; pp. 227-229.
Epitaxial surface-emitting laser on a lattice-mismatched substrate; P.L. Gourley, I.J. Fritz, M. Brennen, B.E. Hammons and A.E. McDonald; Received 10 Oct. 1991; accepted for publication 14 Feb. 1992; pp. 2057-2059.

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