Coherent light generators – Particular active media – Semiconductor
Patent
1993-08-11
1994-12-13
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 96, 437129, H01S 319
Patent
active
053735200
ABSTRACT:
A current constriction layer surrounding a vertical-cavity region is formed in a cladding layer of a surface emitting laser. The forbidden band width of the material forming this current constriction layer is wider than the forbidden band width of a material forming the cladding layer. Further, the current constriction layer and the cladding layer are formed of semiconductors, and conduction types thereof are different from each other. Further, the upper surface of the cladding layer covering the current constriction layer has a step in the periphery of vertical-cavity region.
REFERENCES:
patent: 5038356 (1991-08-01), Botez et al.
patent: 5208820 (1993-05-01), Kurihara et al.
patent: 5226053 (1993-07-01), Cho et al.
patent: 5229627 (1993-07-01), Kosaka
patent: 5237581 (1993-08-01), Asada et al.
Applied Physics Letters, vol. 57, No. 16, Oct. 15, 1990, New York, US, pp. 1605-1607, R. S. Geels, L. A. Coldren, `Submilliamp Threshold Vertical-Cavity Laser Diodes`.
Journal of Applied Physics, vol. 69, No. 11, Jun. 1, 1991, New York, US, pp. 7430-7434, C. Lei et al., `ZnSe/CaF2 Quarter-Wave Bragg Reflector for the Vertical-Cavity Surface-Emitting Laser`.
"CBE Grown 1.5 .mu.m GalnAsP/InP Surface Emitting Lasers," T. Uchida et al., Technical Digest of 13th IEEE International Semiconductor Laser Conference L-2, Sep. 24, 1992, pp. 212-213.
"Submilliamp Threshold Vertical-Cavity Laser Diodes," R. Geels et al., Applied Physics Letters 57 (16), Oct. 15, 1990, pp. 1605-1607.
"High Power GaAs/AlGaAs Vertical Cavity Top-Surface-Emitting Lasers," K. Kojima et al., Technical Digest of 13th IEEE International Semiconductor Laser Conference PD-2, Sep. 24, 1992, pp. 3-4.
Geels et al., "Low Threshold Planarized Vertical-Cavity Surface Emitting Lasers," IEEE Photonics Technology Letters, vol. 2, No. 4, Apr. 1990, pp. 234-236.
Ikeda Tatsuroh
Ishikawa Hiroshi
Matsuda Manabu
Otsubo Koji
Shoji Hajime
Epps Georgia Y.
Fujitsu Limited
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