Surface-emitting laser and a fabrication method thereof

Details Surface-emitting laser and a fabrication method thereof Surface-emitting laser and a fabrication method thereof

1997-09-02

2000-01-11

Bovernick, Rodney

Coherent light generators

Particular resonant cavity

Distributed feedback

372 46, 372 44, 372 45, H01S 308, H01S 3085

Patent

active

060144009

ABSTRACT:
In a surface-emitting laser comprising an active region which includes a light emitting layer and two mirrors which sandwich the active region, at least one of the two mirrors has a distributed Bragg reflector structure which comprises a plurality of first layers including aluminum and a plurality of second layers different from the first layers. At least one selected layer of the first layers has a selective oxide region including aluminum and a core semiconductor region surrounded by the selective oxide region.

REFERENCES:
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5719891 (1998-02-01), Jewell
patent: 5881085 (1999-03-01), Jewell
Hecht, J. Understanding Lasers. Second Edition. IEEE Press, pp. 134-135, 1994.
Hayashi, et al., "record low-threshold index-guided InGalAa/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure", Electronics Letters, vol. 31 No. 7, pp. 560-562,Mar. 30, 1995.
K.D. Choquette, et al., "Cavity characteristics of selectively oxidized vertical-cavity lasers", Appl. Phys. Lett. 66 (25) pp. 3413-3415, Jun. 19, 1995.

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