Surface emitting injection type laser device

Details Surface emitting injection type laser device Surface emitting injection type laser device

1983-04-14

1986-04-08

Davie, James W.

Coherent light generators

Particular resonant cavity

357 17, 372 44, 372 50, H01S 319

Patent

active

045817448

ABSTRACT:
A surface-emitting injection type laser device has a semiconductor wafer including a first and a second main face opposite to each other and an active layer located on the side of the first main face. A single mode optical fiber chip has a first and second end surface perpendicular to its optical axis and is disposed on the semiconductor wafer with the first end surface contacting the second main face through a reflection preventing film. A dielectric film is disposed on the second end surface of the optical fiber chip to increase the reflection power at the second end surface and forming a resonator with the first main face of the semiconductor wafer.

REFERENCES:
patent: 4101845 (1978-07-01), Russer
patent: 4358851 (1982-11-01), Scifres et al.
H. Soda et al., "GaIn As P/InP Surface Emitting Injection Lasers", Japan Journal of Applied Physics, vol. 18, (1979), No. 12, pp. 2329-2330.

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