Surface emission type semiconductor laser

Details Surface emission type semiconductor laser Surface emission type semiconductor laser

1991-09-09

1993-01-19

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, H01S 319

Patent

active

051812193

ABSTRACT:
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like light emitting portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. An active layer of multi-quantum well structure is further formed on the layer section of the cladding layer having the column-like portion. If a plurality of column-like portions are formed, these column-like portions are separated from one another by a separation groove terminating short of the active layer, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove. Particularly, when it is desired to produce a phase synchronization type semiconductor laser, a waveguide layer is formed below the active layer, and the waveguide layer is adapted to propagate light rays in a direction parallel to the active layer.

REFERENCES:
patent: 4856013 (1989-08-01), Iwano et al.
patent: 4949351 (1990-08-01), Imanaka
patent: 5031187 (1991-07-01), Orenstein et al.
patent: 5045897 (1991-09-01), Ahlgren
patent: 5052016 (1991-09-01), Mahbobzadeh et al.
patent: 5068868 (1991-11-01), Deppe et al.
patent: 5086430 (1992-02-01), Kapon et al.
Yoo et al.; "Phase-Locked Two-Dimensional Array of Vertical Cavity Surface Emitting Lasers"; Jap. Journal of Applied Physics, Extended Abstracts 22th Conf. Solid State Devices and Materials, Aug. 1990; pp. 521-524.
Ibaraki et al.; "GaAs/GaAlAS DBR Surface Emitting Laser with GaAlAs/AlAs and SiO.sub.2 /TiO.sub.2 Reflectors"; Conf. Digest of the 11th IEEE International Semiconductor Laser Conference; Aug. 1988, pp. 164-165.
M. Ogura et al.; "Surface-Emitting Laser Diode with Distributed Bragg Reflector and Buried Heterostructure"; Electronics Letters, 26 (1990) 4, Jan., No. 1, pp. 18-19.
Schrerer et al.; "Fabrication of Electrically Pumped Vertical Cavity Microlasers"; Lasers and Electro-Optics Society Annual Meeting Conference proceedings, Oct., 1989, pp. 289-290.
J. L. Jewell et al.; "Surface-Emitting Microlasers for Photonic Switching and Interchip Connections", Optical Engineering, vol. 29, No. 3, Mar. 1990.
Lectures of the 50-th Meeting of Applied Physics in Japan (1989), vol. 3, p. 909, 29z-ZG-7, K. Furusawa et al.

Affiliated with

Also associated with

Rating

Surface emission type semiconductor laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Surface emission type semiconductor laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface emission type semiconductor laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-106124