Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-09-04
1998-10-13
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 98, 257 99, 257 97, H01L 3300
Patent
active
058215697
ABSTRACT:
An n-type GaAs layer as a buffer layer, an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, an active layer, a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.5 In.sub.0.5 P layer, a thin layer of Al.sub.x Ga.sub.1-x As layer (x.gtoreq.0.9), an Al.sub.0.7 Ga.sub.0.3 As layer as a current spreading layer and a high doped p-type GaAs cap layer are sequentially grown on an n-type GaAs layer of a substrate. As the active layer, an (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P based bulk or multi-quantum well is employed. As the current spreading layer, an Al.sub.x Ga.sub.1-x As (x.gtoreq.0.7) is employed. The current spreading layer is a p-type III-IV compound semiconductor having wider band gap than a band gap of a material used for forming the active layer, and being established a lattice matching with the lower p-type cladding layer. After mesa etching up to the cladding layer, growth of selective oxide is performed at a part of the AlGaAs layer. BY this, a block layer (selective oxide of AlGaAs) is formed. By this blocking layer, a light output power and a coupling efficiency are improved.
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Guay John
Jackson Jerome
NEC Corporation
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