Surface-emission semiconductor laser device

Details Surface-emission semiconductor laser device Surface-emission semiconductor laser device

2008-05-06

2008-05-06

Louie, Wai-Sing (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S022000, C438S046000, C438S597000, C438S652000, C257SE33062

Reexamination Certificate

active

11392493

ABSTRACT:
A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.

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