Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S091000, C257S448000, C257S766000
Reexamination Certificate
active
06900475
ABSTRACT:
A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to form an Au alloy in the n-side electrode. The presence of the Au alloy film improves the adherence between the n-side electrode and the compound semiconductor layer to improve an injection current vs. applied voltage characteristic.
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Iwai Norihiro
Yokouchi Noriyuki
Louie Wai-Sing
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Pham Long
The Furukawa Electric Co. Ltd.
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