Surface-emission semiconductor laser device

Details Surface-emission semiconductor laser device Surface-emission semiconductor laser device

2011-02-01

2011-02-01

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular pumping means

Electrical

C372S044010

Reexamination Certificate

active

07881359

ABSTRACT:
A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film.

REFERENCES:
patent: 3386867 (1968-06-01), Staples
patent: 3959522 (1976-05-01), Ladany et al.
patent: 4179534 (1979-12-01), Chang et al.
patent: 4488306 (1984-12-01), Sugino et al.
patent: 4766472 (1988-08-01), Brillouet et al.
patent: 4853346 (1989-08-01), Baker et al.
patent: 5196369 (1993-03-01), Hayakawa
patent: 5493577 (1996-02-01), Choquette et al.
patent: 5719891 (1998-02-01), Jewell
patent: 5731224 (1998-03-01), Gerner
patent: 5896408 (1999-04-01), Corzine et al.
patent: 5959401 (1999-09-01), Asami et al.
patent: 6014400 (2000-01-01), Kobayashi et al.
patent: 6046065 (2000-04-01), Goldstein et al.
patent: 6061380 (2000-05-01), Jiang et al.
patent: 6061485 (2000-05-01), Jiang et al.
patent: 6316792 (2001-11-01), Okazaki et al.
patent: 6420736 (2002-07-01), Chen et al.
patent: 6480516 (2002-11-01), Shimizu
patent: 6829274 (2004-12-01), Ueda et al.
patent: 6839369 (2005-01-01), Iwai et al.
patent: 6900475 (2005-05-01), Yokouchi et al.
patent: 5-231446 (1993-09-01), None
Vishnyakov, et al., Production of Ohmic Contacts to AIGaAs of the n- and p-type Conductivity with Surface Cleaning in Atomic Hydrogen, SPIE Conference on Microelectronic Devices, Santa Clara, Sep. 1998, pp. 335-340.
Yih-Chen Shih, et al., Effects of Interfacial Microstructure on Uniformity and Thermal Stability of AuNiGe Ohmic Contact to n-type GaAs, J. Appl. Phys. 62 (2), Jul. 15, 1987, 1987 American Institute of Physics, pp. 582-590.
T.S. Kuan, et al., Electron Microscope Studies in an Alloyed Au/Ni/Au-Ge Ohmic Contact to GaAs, J. Appl. Phys. 54 (12), Dec. 1983, 1983 American Institute of Physics, pp. 6952-6957.
T.K. Higman, et al., Structural Analysis of Au-Ni-Ge and Au-Ag-Ge Alloyed Ohmic Contacts on Modulation-doped AIGaAs-GaAs Heterostructures, J. Appl. Phys. 60 (2), Jul. 15, 1986, 1986 American Institute of Physics, pp. 677-680.
K. Matsuda, et al., A Surface-Emitting Laser Array with Backside Guiding Holes for Passive Alignment to Parallel Optical Fibers, IEEE Photonics Technology Letters, vol. 8, No. 4, Apr. 1996, pp. 494-496.
U.S. Appl. No. 12/108,931, filed Apr. 24, 2008, Iwai, et al.

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