Surface-emission laser diode operable in the wavelength band...

Details Surface-emission laser diode operable in the wavelength band... Surface-emission laser diode operable in the wavelength band...

2007-07-17

2007-07-17

Menefee, James (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050110, C372S099000

Reexamination Certificate

active

10697035

ABSTRACT:
A surface-emission laser diode includes a distributed Bragg reflector tuned to wavelength of 1.1 μm or longer, wherein the distributed Bragg reflector includes an alternate repetition of a low-refractive index layer and a high-refractive index layer, with a heterospike buffer layer having an intermediate refractive index interposed therebetween with a thickness in the range of 5–50 nm.

REFERENCES:
patent: 4949350 (1990-08-01), Jewell et al.
patent: 5759453 (1998-06-01), Kato
patent: 5853626 (1998-12-01), Kato
patent: 6850548 (2005-02-01), Villareal et al.
U.S. Appl. No. 11/220,826, filed Sep. 8, 2005, Sekiya et al.
U.S. Appl. No. 11/338,692, filed Jan. 25, 2006, Sekiya et al.

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