Surface emission laser and method of manufacturing the same

Coherent light generators – Particular resonant cavity – Distributed feedback

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372 99, 372 45, 372 46, 437129, H01S 308, H01S 319, H01L 2120

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active

057038988

ABSTRACT:
A surface emission laser is formed by sequentially stacking an n-type semiconductor multilayer reflector, an n-type clad layer, an active layer, a p-type clad layer, and a p-type semiconductor multilayer reflector on a semiconductor substrate. The p-type semiconductor multilayer reflector is etched to form a mesa. An electrode is formed on at least on the mesa side surfaces and a portion of the mesa bottom surface. The thickness of a GaAs film as the mesa bottom surface of the p-type semiconductor multilayer reflector to which an etching process is stopped is set to be (1/4+n/2, where n is an integer) times the oscillation wavelength. A method of manufacturing the surface emission laser is also disclosed.

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patent: 5513202 (1996-04-01), Kobayashi et al.
K. Kurihara et al.; "Double-Mesa-Structure Vertical-to-Surface Transmission Electro-Photonic Device with a Vertical Cavity"; Japan Journal of Applied Physics, vol. 32 (1993) pp. 604-608. (no month).

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