Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Patent
1995-06-20
1998-09-08
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
257173, 257632, 257647, 257648, 257788, H01L 2358, H01L 2328, H01L 2329
Patent
active
058048847
ABSTRACT:
The resin sealing layer enclosing the device is biased to a low voltage by means of an anchoring structure formed close to high-voltage contact pads. The anchoring structure is formed by a metal region deposited on the surface of the device and contacting the resin layer, and by a deep region extending from the surface of the device, beneath the metal region, to the substrate. The electrical field in the resin layer is confined between the high-voltage pads and the anchoring structure and prevented from generating polarity inversions in the semiconductor material at the low-voltage contact pads or any other points at which the resin layer contacts the body of semiconductor material.
REFERENCES:
patent: 4400711 (1983-08-01), Avery
patent: 4825278 (1989-04-01), Hillenius et al.
patent: 5341005 (1994-08-01), Canclini
patent: 5610435 (1997-03-01), Watanabe et al.
Contiero Claudio
Diazzi Claudio
Mastromatteo Ubaldo
Murari Bruno
Saadat Mahshid D.
SGS--Thomson Microelectronics S.r.l.
Wilson Allan R.
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