Surface conditioning insulating layer for fine line conductive p

Details Surface conditioning insulating layer for fine line conductive p Surface conditioning insulating layer for fine line conductive p

1997-01-24

1998-06-16

Arroyo, Teresa M.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257506, 438638, H01L 2900, H01L 2348

Patent

active

057675821

ABSTRACT:
The surface of an insulating layer is conditioned by treatment with ammonium hydroxide and hydrogen peroxide, thereby reducing the frequency of shorting between conductive lines of a subsequently formed conductive pattern thereon.

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N. Watanabe et al., "Etching Rates of SiO.sub.2 and Si.sub.3 N.sub.4 Insulating Films in Ammonia Hydrogen-Peroxide Cleaning Process," Extended Abstracts, vol. 83, No. 1, May 1983, Pennington, New Jersey, pp. 221-222.

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