Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Patent
1997-09-24
1999-11-16
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
257111, H01C 2974
Patent
active
059862890
ABSTRACT:
The present invention relates to a bidirectional breakover component including a lightly-doped N-type substrate, an upper P-type region extending over practically the entire upper surface of the component except its circumference, a lower P-type uniform layer on the lower surface side of the component, substantially complementary N-type regions respectively formed in the upper region and in the lower layer, a peripheral P-type well, an overdoped P-type region at the upper surface of the well, and lightly-doped N-type regions between the circumference of the upper region and the well.
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patent: 4797720 (1989-01-01), Lindner et al.
patent: 4825266 (1989-04-01), Whight
patent: 4967256 (1990-10-01), Pathak et al.
patent: 5828089 (1998-10-01), Bernier
French Search Report from French Patent Application 96 11901, filed Sep. 25, 1996.
RCA Technical Notes, No. 1343, Mar. 1984, Princeton, US, pp. 1-6, J. M. S. Neilson, et al., "Avalanche Diode Structure".
Hardy David B.
SGS-Thomson Microelectronics S.A.
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