Surface barrier tailoring of semiconductor devices utilizing sca

Details Surface barrier tailoring of semiconductor devices utilizing sca Surface barrier tailoring of semiconductor devices utilizing sca

1978-06-06

1980-01-22

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29576B, 250492A, 357 23, 357 24, 357 29, 357 52, 357 91, H01L 2126, H01L 21324, H01L 2978

Patent

active

041848969

ABSTRACT:
A method of spatially tailoring the surface barrier of MOS devices by means of a scanning electron microscope using ionizing radiation at the silicon dioxide-silicon interface to control the surface charge distribution. The MOS is subsequently annealed at about 300.degree. C. for several hours to stabilize the surface potential.

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Bhatia et al., "Irradiation Technique . . . Charge-Coupled Storage Cell", I.B.M. Tech. Discl. Bull., vol. 15, No. 3, Aug. 1972, pp. 723-724.

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