Surface acoustic wave element

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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310313D, 364821, H01L 4108

Patent

active

052818829

ABSTRACT:
A GaAs piezoelectric semiconductor thin film in the form of an epitaxial film is provided on a Si substrate 1, and an input transducer 3 and an output transducer 4 for input and output of a surface acoustic wave are provided on the film. A surface acoustic wave element, thus arranged, has a sound characteristic superior to that of a single crystalline GaAs substrate and permits the use of an electromechanical coupling coefficient larger than that of the single crystalline GaAs. Thus the element copes with a much higher sound velocity of SAWs.

REFERENCES:
patent: 4449107 (1984-05-01), Asai et al.
patent: 4516049 (1985-05-01), Mikoshiba et al.
patent: 4539501 (1985-09-01), Trong et al.
patent: 4567393 (1986-01-01), Asai et al.
patent: 4571519 (1986-02-01), Kawabata et al.
patent: 4752709 (1988-06-01), Fujishima et al.
patent: 4757226 (1988-07-01), Mitsutsuka et al.
patent: 4884001 (1989-11-01), Sacks et al.
patent: 4943751 (1990-07-01), Mitsutsuka
patent: 5091669 (1992-02-01), Mitsutsuka
New Modes in III-V monolithic SAW devices, by Henaff and Feldmann, 9th International Symposium on Gallium Arsenide and Related Compounds, OiSo Japan, Sep. 20-23, 1981, Inst. Phys. Conf., Ser. No. 63, Chapt. 9, pp. 455-460.
Integrated Circuit Compatible Surface Acoustic Wave Devices on Gallium Arsenide, Grudkowski et al., IEEE Transactions on Microwave Theory and Techniques, vol. MTT-29, No. 12, Dec. 1981.

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