Surface acoustic wave device, manufacturing method therefor,...

Details Surface acoustic wave device, manufacturing method therefor,... Surface acoustic wave device, manufacturing method therefor,...

2007-11-27

2007-11-27

Summons, Barbara (Department: 2817)

Wave transmission lines and networks

Plural channel systems

Having branched circuits

C333S193000

Reexamination Certificate

active

11169160

ABSTRACT:
A conductor layer10is provided so as to prevent pyroelectric destruction occurring in the steps of manufacturing a surface acoustic wave element1on the other surface opposite to an IDT electrode formation surface of a piezoelectric substrate2. At this time, the conductor layer10is formed, except for a region5aopposed to an input electrode section5in a filter region9and/or a region6aopposed to an output electrode section6. This allows a coupling amount between the input electrode section5and the output electrode section6due to a parasitic capacitance formed between the input electrode section5and the output electrode section6in the filter region9to be reduced, thereby allowing the out-of-band attenuation characteristics of a surface acoustic wave device to be improved.

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Akinori Miyamoto, et al., “Novel Optical Observation Technique for shear Horizontal Wave in SAW Resonators on 42 YX-cut Lithium Tantalate”; 2002 IEEE Ultrasonics Symposium-89, vol. 1, pp. 89-92, Oct. 2002.

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