Surface acoustic wave device having AlN and ZnO layers on a Si s

Details Surface acoustic wave device having AlN and ZnO layers on a Si s Surface acoustic wave device having AlN and ZnO layers on a Si s

1984-06-11

1986-01-28

Wong, Peter S.

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

333154, H03H 925

Patent

active

045673934

ABSTRACT:
A surface acoustic wave device comprises a silicon substrate, an aluminum nitride layer provided on the silicon substrate, a zinc oxide layer provided on the aluminum nitride layer, and electrodes provided on either the silicon substrate, aluminum nitride layer or zinc oxide layer. Propagation is in the [001]- or [011]-axis direction on (100) Si, [001]- or [110]-axis on (110) Si, [112]-axis on (111) Si, or [111]-axis on (112) Si.

REFERENCES:
patent: 4006438 (1977-02-01), Bennett
patent: 4037176 (1977-07-01), Ono et al.
patent: 4328472 (1982-05-01), Grudkowski
patent: 4350916 (1982-09-01), August et al.
A. H. Fahmy et al, "Multilayer Acoustic-Surface-Wave Program", Proc. IEEE, vol. 122, No. 5, May 1975, pp. 470-472.

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