Surface acoustic wave device and method for producing the same

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal

Reexamination Certificate

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C438S056000, C438S510000

Reexamination Certificate

active

06984540

ABSTRACT:
A surface acoustic wave device includes a piezoelectric substrate, a first interdigital transducer and a second interdigital transducer formed on the substrate so that the first and second interdigital transducers are opposed to each other. The substrate includes a doping region that is doped with a substance in at least one form selected from the group consisting of atoms, molecules and clusters in a surface between the first and second interdigital transducers.

REFERENCES:
patent: 4072915 (1978-02-01), Mitchell
patent: 4707059 (1987-11-01), Ogura et al.
patent: 5426340 (1995-06-01), Higaki et al.
patent: 5796205 (1998-08-01), Nishihara et al.
patent: 5889446 (1999-03-01), Yamada et al.
patent: 5923231 (1999-07-01), Ohkubo et al.
patent: 0 893 515 (1999-01-01), None
patent: 2 764 440 (1998-12-01), None
patent: 1-106611 (1989-04-01), None
patent: 3-29407 (1991-02-01), None
patent: 10-303681 (1998-11-01), None
patent: 11-74750 (1999-03-01), None
patent: 11-92147 (1999-04-01), None
patent: 2000-517144 (2000-12-01), None
patent: 98/57426 (1998-12-01), None
S. M. Sze, pp. 32-33, VLSI technology, 1983, McGraw-Hill Book company.

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